 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AO3438 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO3438 and AO3438L are eletrically identical. -RoHs Compliant -AO3438L is Halogen Free Features VDS = 20V ID = 3A RDS(ON) < 62m RDS(ON) < 70m RDS(ON) < 85m (V GS = 4.5V) (V GS = 4.5V) (VGS = 2.5V) (VGS = 1.8V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 8 3 2.5 16 1.4 0.9 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO3438 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=3A Static Drain-Source On-Resistance TJ=125C VGS=2.5V, ID=2.8A VGS=1.8V, ID=2.5A gFS VSD IS Forward Transconductance VDS=5V, ID=3A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.5 16 51 68 58 68 11 0.7 1 2 260 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 48 27 3 2.9 VGS=4.5V, VDS=10V, ID=3A 0.4 0.6 2.5 VGS=5V, VDS=10V, RL=3.3, RGEN=6 IF=3A, dI/dt=100A/s 3.2 21 3 14 3.8 19 4.5 3.8 320 62 85 70 85 0.7 Min 20 1 5 100 1 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev1 : March 2008 2 12 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 4.5V 12 2.5V 2V 12 16 VDS=5V ID (A) 8 VGS=1.5V 4 ID(A) 8 4 125C 25C 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 120 Normalized On-Resistance 0 0 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 1.6 VGS=1.8V ID=2A VGS=2.5V ID=2.8A 100 RDS(ON) (m) VGS=1.8V 80 VGS=2.5V 60 VGS=4.5V 40 0 3 6 9 12 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 120 ID=3A 1.4 1.2 VGS=4.5V ID=3A 1 0.8 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 100 RDS(ON) (m) 12 1E-01 125C IS (A) 80 125C 1E-02 25C 1E-03 60 25C 40 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO3438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=3A Capacitance (pF) 400 300 Ciss 200 100 Coss Crss 0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 100.00 TJ(Max)=150C TA=25C 10s 100 1000 TJ(Max)=150C TA=25C 10.00 ID (Amps) 1.00 1m RDS(ON) limited DC 10ms 0.1s 1s Power (W) 100 10 0.10 0.01 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Single Pulse 0.001 0.00001 Ton T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. |
Price & Availability of AO3438
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |